| PART |
Description |
Maker |
| IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| 2PG303 |
Insulated Gate Bipolar Transistor
|
Panasonic
|
| IRG4PC30KPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
